The NZXT HALE82 N 650 W uses a regular design in its secondary, with Schottky rectifiers.
The maximum theoretical current each line can deliver is given by the formula I / (1 – D) where D is the duty cycle used and I is the maximum current supported by the rectifying diode. As an exercise, we can assume a duty cycle of 30 percent.
The +12 V output uses four MBR30L60CT Schottky rectifiers (30 A, 15 A per internal diode at 120° C, 0.75 V maximum voltage drop). This gives us a maximum theoretical current of 86 A or 1,029 W for the +12 V output.
The +5 V output uses two MBR30L45CT Schottky rectifiers (30 A, 15 A per internal diode at 120° C, 0.74 V maximum voltage drop). This gives us a maximum theoretical current of 43 A or 214 W for the +5 V output.
The +3.3 V output uses another two MBR30L45CT Schottky rectifiers, giving us a maximum theoretical current of 43 A or 141 W for the +3.3 V output.
This power supply uses a WT7527 monitoring integrated circuit, which supports over voltage (OVP), under voltage (UVP), and over current (OCP) protections. Even though this chip provides two +12 V over current channels, the manufacturer decided to configure this unit as a single-channel model.
The electrolytic capacitors that filter the outputs are from CapXon and labeled at 105° C, as usual.